RB225T-40

Data Sheet Schottky Barrier Diode RB225T-40 Applications Switching power supply Features Dimensions(Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 for Structure (1) (2) (3) 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability ed Construction mendigns Silicon epitaxial planer 5.0±0.2 8.0±0.2 12.0±0.2 1133..55MMiInN. 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : ＴO220FN ① Manufacture Date 2.6±0.5 ecom Des Absolute maximum ratings(Ta=25C) w Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 40 V R e Reverse voltage (DC) VR 40 V Average rectified forward current(*1) Io 30 A t N Forward current surge peak （60Hz・1cyc）(*1) IFSM 100 A Junction temperature Tj 150 C o Storage temperature Tstg 40 to 150 C N(*1)Tc=105Cmax Per chip:Io/2 Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Thermal impedance ( ) : tentative Symbol Min. Typ. Max. Unit Conditions VF - - 0.63 V IF=15A IR - - 500 μA VR=40V θjc - - (1.75) C/W junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A RB225T-40 Electrical characteristic curves Data Sheet FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) 100 Ta=150C 1000000 100000 Ta=150C Ta=125C 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) 10 Ta=125C Ta=75C 10000 Ta=75C 1000 1000 1 Ta=25C Ta=25C 100 Ta=-25C 0.1 0.01 0 100 2...