EM6K6

EM6K6 　　Nch+Nch 20V 300mA Small Signal MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 20V 1.0Ω ±300mA 150mW lFeatures 1) The MOSFET elements are independent, 　eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.8V) makes this device ideal 　for portable equipment. 5) Pb-free lead plating ; RoHS compliant. lOutline SOT-563 SC-107C EMT6 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing lApplication Reel size (mm) Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage VDSS ID IDP*1 VGSS 20 ±300 ±600 ±8 Power dissipation total element PD*2 150 120 Junction temperature Operating junction and storage temperature range Tj 150 Tstg -55 to +150 Embossed Tape 180 8 8000 T2R K06 Unit V mA mA V mW ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160630 - Rev.002 　 　 EM6K6 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient total element 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　 　 　 　 Symbol RthJA*2 Values Unit Min. Typ. Max. - - 833 ℃/W - - 1042 lElectrical characteristics (Ta = 25°C) Parameter Symbol Co...