2SB1669

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. ORDERING INFORMATION Part No. 2SB1669 2SB1669-S 2SB1669-Z Package TO-220AB TO-262 TO-220SMD FEATURES High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A) Z type available for surface mounting supported prodcuts ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg (TC = 25°C) (TA = 25°C) PW ≤ 10 ms, duty cycle ≤ 50% Conditions Ratings −60 −60 −7.0 −3.0 −6.0 −1.0 25 1.5 150 −55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15410EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Printed in Japan © 2002 1998 2SB1669 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector cutoff current DC cu...