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N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET
TYPE STB100NF04L
s s s s
STB100NF0...
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N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET
TYPE STB100NF04L
s s s s
STB100NF04L
VDSS 40 V
RDS(on) <0.0042Ω
ID 100 A
TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(*) ID IDM() Ptot dv/dt
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175
(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V
Unit V V V A A A W W/°C V/ns J °C °C
EAS (2) Tstg Tj
() Pulse wid...