L53F3BT

T-1 3/4 (5mm) INFRA-RED EMITTING DIODES www.DataSheet4U.com L53F3C L53SF4C L53F3BT L53SF4BT Features !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO:CDA0543 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: OCT/29/2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 4 www.DataSheet4U.com Selection Guide Po (m W/s r ) @20m A Min . L53F 3C L53F 3B T L53SF4C L53SF4BT GaAs GaAs GaAlAs GaAlAs WATER CLEAR BLUE TRANSPARENT WATER CLEAR BLUE TRANSPARENT 8 5 8 5 Ty p . 20 20 20 20 Po (m W/s r ) @50m A Min . 12 8 12 8 Ty p . 30 30 30 30 V i ew i n g An g l e 2θ1/2 3 0° 3 0° 3 0° 3 0° Par t No . Dic e L en s Ty p e Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. Electrical / Optical Characteristics at T)=25°C It em Forward Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth P/N F3 S F4 F3 S F4 F3 S F4 F3 S F4 F3 S F4 Sy m b o l VF IR C λP ∆λ Ty p . 1.2 1.3 90 90 940 880 50 50 Max . 1.5 1.7 10 10 Un it V uA pF nm nm Co n d ...