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EMP213

Excelics Semiconductor

12.5 - 15.5 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP213 UPDATED 05/08/2008 12.5 – 15.5 GHz Power Amplifier MMIC FEATURES • • • • • • 12.5 – 15.5 G...



EMP213

Excelics Semiconductor


Octopart Stock #: O-679802

Findchips Stock #: 679802-F

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www.DataSheet4U.com EMP213 UPDATED 05/08/2008 12.5 – 15.5 GHz Power Amplifier MMIC FEATURES 12.5 – 15.5 GHz Operating Frequency Range 27.0dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 17dBm Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2250um X 1130um Thickness: 85um ± 15um APPLICATIONS Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=400mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL NF Idss VDD Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 17dBm Ids = 60% +10%Idss Input Return Loss Output Return Loss Noise Figure Saturated Drain Current Drain Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 VDS =3V, VGS =0V 475 MIN 12.5 26.0 14.0 27.0 16.0 -41 -12 -8 9 620 7 22 +85 750 8 o TYP MAX 15.5 UNITS GHz dBm dB -38 -8 -5 dBc dB dB dB mA V C/W ºC MAXIMUM RATINGS AT 25°C1,2 SYMBOL Vds VGS Ids IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12V -8V Idss 57mA 24dBm 175°C -65/175°C 6.2W CONTINUOUS 8V -4V 650mA 9.5 mA @ 3dB compression 150°C -65/150°C 5.2W 1. Operating the device beyond any of the above rating may ...




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