EIC4853-25

www.DataSheet4U.com EIC4853-25 4.8-5.30 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES 4.80 – 5.30GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC4853-25 0.945 0.803 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Tb = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43.5 9 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500mA Gain at 1dB Compression f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500mA Gain Flatness f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 6500mA f = 4.80-5.30 GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 TYP 44.5 10 MAX UNITS dBm dB ±0.6 36 7050 11 -2.5 1.4 8300 16 -4.0 1.8 o dB % mA A V C/W f = 4.80-5.30 GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 mA 2. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 130mA and -10.5mA respectively Overall Rth depends on case mounting. MAXIMUM RATING AT Tb = 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissi...