4.40-5.00GHz 15-Watt Internally Matched Power FET
www.DataSheet4U.com
EIC4450-15
ISSUED: 03/30/2009
4.40-5.00GHz 15-Watt Internally Matched Power FET
2X 0.079 MIN 4X 0....
Description
www.DataSheet4U.com
EIC4450-15
ISSUED: 03/30/2009
4.40-5.00GHz 15-Watt Internally Matched Power FET
2X 0.079 MIN 4X 0.102
FEATURES
4.40– 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 31 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC4450-15
0.024 0.580
YYWW
SN
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Drain Current at 1dB Compression f = 4.40-5.00GHz
Caution! ESD sensitive device. MIN
41 9.5
TYP
42 10.5
MAX
UNITS
dBm dB
±0.7 31 4500 -43 -46 9000 -2.5 1.8 13000 -4.0 2.1
o
dB %
5100
mA dBc mA V C/W
Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz
Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 84 mA
Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively. ...
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