RJL5015DPK

Preliminary www.DataSheet4U.com Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EAR Pch Note2 ch-c Tch Tstg Note3 Ratings 500 ±30 22 66 22 66 7 2.7 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1912-0100 Rev.1.00 May 27, 2010 Page 1 of 6 RJL5015DPK Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate char...