Silicon N Channel MOS FET High Speed Power Switching
Description
Preliminary www.DataSheet4U.com Datasheet
RJK6029DJA
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
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1. Sou...
