RJK6025DPE

www.DataSheet4U.com RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Pch Note2 θch-c Tch Tstg Note1 Ratings 600 ±30 0.8 1.2 0.8 1.2 25 5 150 –55 to +150 Unit V V A A A A W °C/W °C °C REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Page 1 of 3 RJK6025DPE www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) R...