RJK6024DPD

Preliminary www.DataSheet4U.com Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IDR(pulse)Note1 Pch Note2 ch-c Tch Tstg Ratings 600 30 0.4 0.6 0.4 0.6 27.2 4.58 150 –55 to +150 Unit V V A A A A W C/W C C REJ03G1936-0100 Rev.1.00 Jun 01, 2010 Page 1 of 6 RJK6024DPD Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3...