RJK5030DPD

Preliminary www.DataSheet4U.com Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg Note1 Value 500 30 5 20 5 41.7 3.0 150 –55 to +150 Unit V V A A A W C/W C C REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Page 1 of 5 RJK5030DPD Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V (BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 500 — — 3.5 — — — — — — — — ...