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RJK5026DPE

Renesas Technology
Part Number RJK5026DPE
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Jul 23, 2010
Detailed Description com RJK5026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low ...
Datasheet PDF File RJK5026DPE PDF File

RJK5026DPE
RJK5026DPE

Overview
com RJK5026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1852-0100 Rev.
1.
00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
...


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