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RJK5012DPE

Renesas Technology
Part Number RJK5012DPE
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Jul 23, 2010
Detailed Description Preliminary com Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Lo...
Datasheet PDF File RJK5012DPE PDF File

RJK5012DPE
RJK5012DPE

Overview
Preliminary com Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.
515  typ.
(at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching REJ03G1487-0300 Rev.
3.
00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedanc...


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