Document
Preliminary www.DataSheet4U.com Datasheet
RJK0394DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1785-0210 Rev.2.10 May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 35 140 35 14 19.6 35 3.57 150 –55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1785-0210 Rev.2.10 May 12, 2010
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RJK0394DPA
Preliminary
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.1 5.3 95 2430 320 170 1.4 15.5 7.1 3.7 13.0 5.2 45 6.2 0.83 22 Max — ± 0.1 1 2.5 5.3 7.4 — — — — — — — — — — — — 1.08 — Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 17.5 A, VGS = 10 V Note4 ID = 17.5 A, VGS = 4.5 V Note4 ID = 35 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 35 A VGS = 10 V, ID = 17.5 A VDD 10 V RL = 0.57 Rg = 4.7 IF = 35 A, VGS = 0 Note4 IF =35 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1785-0210 Rev.2.10 May 12, 2010
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RJK0394DPA
Preliminary
www.DataSheet4U.com
Main Characteristics
Power vs. Temperature Derating
40 1000
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
30
100
10 s s 0μ 1m
μs
20
10
PW = 10 ms
10
1
Operation in this area is limited by RDS(on) Tc = 25 °C 1 shot Pulse
1
DC e Op rat ion
0
50
100
150
200
0.1 0.1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 4.5 V 10 V 2.8 V 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
30
2.6 V
Drain Current ID (A)
40
Pulse Test
3.2 V
40
30
20
20
VGS = 2.4 V
10
10
25°C Tc = 75°C –25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
200
Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current
100
Pulse Test
150
Static Drain to Source On State Resistance RDS(on) (mΩ)
Pulse Test
30
100
10
ID = 20 A
VGS = 4.5 V
3 10 V
50
10 A
5A
0
4
8
12
16
20
1 1
3
10
30
100
300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1785-0210 Rev.2.10 May 12, 2010
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RJK0394DPA
Static Drain to Source On State Resistance vs. Temperature
10 Pulse Test ID = 5 A, 10 A, 20 A 10000 3000
Preliminary
www.DataSheet4U.com
Static Drain to Source On State Resistance RDS(on) (mΩ)
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
8 VGS = 4.5 V
Ciss 1000 300 100 30 10 0 Coss Crss
6
4 10 V 2 0 –25
5 A, 10 A, 20 A
VGS = 0 f = 1 MHz 10 20 30
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs. Source to Drain Voltage
20 50
Drain to Source Voltage VDS (V)
50
Gate to Source Voltage VGS (V)
Reverse Drain Current IDR (A)
ID = 35 A
10 V 40 5V
Pulse Test
40 VGS 30 VDS VDD = 25 V 10 V
16
12
30
20
8
20 VGS = 0, –5 V
10
VDD = 25 V 10 V 0 10 20 30 40
4
10
0 50
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
25 IAP = 14 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω
20
15
10
5 0 25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1785-0210 Rev.2.10 May 12, 2010
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RJK0394DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t).