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RJK0394DPA Dataheets PDF



Part Number RJK0394DPA
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK0394DPA DatasheetRJK0394DPA Datasheet (PDF)

Preliminary www.DataSheet4U.com Datasheet RJK0394DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1785-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Ma.

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Preliminary www.DataSheet4U.com Datasheet RJK0394DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1785-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 35 140 35 14 19.6 35 3.57 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1785-0210 Rev.2.10 May 12, 2010 Page 1 of 6 RJK0394DPA Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.1 5.3 95 2430 320 170 1.4 15.5 7.1 3.7 13.0 5.2 45 6.2 0.83 22 Max — ± 0.1 1 2.5 5.3 7.4 — — — — — — — — — — — — 1.08 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 17.5 A, VGS = 10 V Note4 ID = 17.5 A, VGS = 4.5 V Note4 ID = 35 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 35 A VGS = 10 V, ID = 17.5 A VDD  10 V RL = 0.57  Rg = 4.7  IF = 35 A, VGS = 0 Note4 IF =35 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1785-0210 Rev.2.10 May 12, 2010 Page 2 of 6 RJK0394DPA Preliminary www.DataSheet4U.com Main Characteristics Power vs. Temperature Derating 40 1000 10 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 100 10 s s 0μ 1m μs 20 10 PW = 10 ms 10 1 Operation in this area is limited by RDS(on) Tc = 25 °C 1 shot Pulse 1 DC e Op rat ion 0 50 100 150 200 0.1 0.1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 10 V 2.8 V 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 30 2.6 V Drain Current ID (A) 40 Pulse Test 3.2 V 40 30 20 20 VGS = 2.4 V 10 10 25°C Tc = 75°C –25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) 200 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 150 Static Drain to Source On State Resistance RDS(on) (mΩ) Pulse Test 30 100 10 ID = 20 A VGS = 4.5 V 3 10 V 50 10 A 5A 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1785-0210 Rev.2.10 May 12, 2010 Page 3 of 6 RJK0394DPA Static Drain to Source On State Resistance vs. Temperature 10 Pulse Test ID = 5 A, 10 A, 20 A 10000 3000 Preliminary www.DataSheet4U.com Static Drain to Source On State Resistance RDS(on) (mΩ) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 8 VGS = 4.5 V Ciss 1000 300 100 30 10 0 Coss Crss 6 4 10 V 2 0 –25 5 A, 10 A, 20 A VGS = 0 f = 1 MHz 10 20 30 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 50 Drain to Source Voltage VDS (V) 50 Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) ID = 35 A 10 V 40 5V Pulse Test 40 VGS 30 VDS VDD = 25 V 10 V 16 12 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 10 20 30 40 4 10 0 50 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 25 IAP = 14 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω 20 15 10 5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1785-0210 Rev.2.10 May 12, 2010 Page 4 of 6 RJK0394DPA Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t).


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