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RJK0391DPA Dataheets PDF



Part Number RJK0391DPA
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK0391DPA DatasheetRJK0391DPA Datasheet (PDF)

Preliminary www.DataSheet4U.com Datasheet RJK0391DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1824-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Ma.

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Preliminary www.DataSheet4U.com Datasheet RJK0391DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1824-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 50 200 50 25 62.5 50 2.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1824-0210 Rev.2.10 May 12, 2010 Page 1 of 6 RJK0391DPA Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 2.2 2.8 160 5600 710 370 0.95 34 16 7.4 15.3 8 66 14.1 0.80 35 Max — ± 0.5 1 2.5 2.9 3.9 — — — — — — — — — — — — 1.04 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 25 A, VGS = 10 V Note4 ID = 25 A, VGS = 4.5 V Note4 ID = 25 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 50 A VGS = 10 V, ID = 25 A VDD  10 V RL = 0.4  Rg = 4.7  IF = 50 A, VGS = 0 Note4 IF =50 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1824-0210 Rev.2.10 May 12, 2010 Page 2 of 6 RJK0391DPA Preliminary www.DataSheet4U.com Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Pch (W) ID (A) 60 100 10 10 μs Channel Dissipation 0 Drain Current 40 10 20 1 1 ms PW = 10 ms Operation in this area is limited by RDS(on) μs DC O n tio ra pe 0 50 100 150 200 Tc = 25°C 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 10 V 50 3.1 V Pulse Test 3.0 V 2.9 V 30 2.8 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 40 40 30 Drain Current 20 20 25°C –25°C 10 VGS = 2.6 V 10 Tc = 75°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) 120 Pulse Test 90 Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 30 60 10 ID = 20 A 30 10 A 5A 3 VGS = 4.5 V 10 V 0 4 8 12 16 20 1 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1824-0210 Rev.2.10 May 12, 2010 Page 3 of 6 RJK0391DPA Static Drain to Source On State Resistance vs. Temperature 10 Pulse Test 10000 3000 Preliminary www.DataSheet4U.com Static Drain to Source On State Resistance RDS (on) (mΩ) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 8 Ciss 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Coss Crss 6 ID = 5 A, 10 A, 20 A 4 VGS = 4.5 V 2 10 V 0 –25 5 A, 10 A, 20 A 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 VGS VDD = 25 V 10 V 16 Reverse Drain Current IDR (A) ID = 50 A Pulse Test 10 V 40 4.5 V 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage 30 20 8 20 VGS = 0, –5 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 10 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 100 IAP = 25 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1824-0210 Rev.2.10 May 12, 2010 Page 4 of 6 RJK0391DPA Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impe.


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