Document
Preliminary www.DataSheet4U.com Datasheet
RJK0391DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1824-0210 Rev.2.10 May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 50 200 50 25 62.5 50 2.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1824-0210 Rev.2.10 May 12, 2010
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RJK0391DPA
Preliminary
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 2.2 2.8 160 5600 710 370 0.95 34 16 7.4 15.3 8 66 14.1 0.80 35 Max — ± 0.5 1 2.5 2.9 3.9 — — — — — — — — — — — — 1.04 — Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 25 A, VGS = 10 V Note4 ID = 25 A, VGS = 4.5 V Note4 ID = 25 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 50 A VGS = 10 V, ID = 25 A VDD 10 V RL = 0.4 Rg = 4.7 IF = 50 A, VGS = 0 Note4 IF =50 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1824-0210 Rev.2.10 May 12, 2010
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RJK0391DPA
Preliminary
www.DataSheet4U.com
Main Characteristics
Power vs. Temperature Derating
80 1000
Maximum Safe Operation Area
Pch (W)
ID (A)
60
100
10
10
μs
Channel Dissipation
0
Drain Current
40
10
20
1
1 ms PW = 10 ms Operation in this area is limited by RDS(on)
μs
DC O n tio ra pe
0
50
100
150
200
Tc = 25°C 0.1 1 shot Pulse 0.1 1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 4.5 V 10 V 50 3.1 V Pulse Test 3.0 V 2.9 V 30 2.8 V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
40
30
Drain Current
20
20 25°C –25°C
10
VGS = 2.6 V
10
Tc = 75°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Static Drain to Source On State Resistance RDS (on) (mΩ)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (mV)
120 Pulse Test 90
Static Drain to Source On State Resistance vs. Drain Current
100 Pulse Test
30
60
10
ID = 20 A
30 10 A
5A
3
VGS = 4.5 V 10 V
0
4
8
12
16
20
1 1
3
10
30
100
300 1000
Gate to Source Voltage
VGS (V)
Drain Current
ID
(A)
REJ03G1824-0210 Rev.2.10 May 12, 2010
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RJK0391DPA
Static Drain to Source On State Resistance vs. Temperature
10 Pulse Test 10000 3000
Preliminary
www.DataSheet4U.com
Static Drain to Source On State Resistance RDS (on) (mΩ)
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
8
Ciss
1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 Coss Crss
6 ID = 5 A, 10 A, 20 A 4 VGS = 4.5 V
2 10 V 0 –25 5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
VGS (V)
20 50
Dynamic Input Characteristics
VDS (V)
50
VGS VDD = 25 V 10 V 16
Reverse Drain Current IDR (A)
ID = 50 A
Pulse Test 10 V 40 4.5 V
40
Drain to Source Voltage
30
VDS
12
Gate to Source Voltage
30
20
8
20 VGS = 0, –5 V
10
VDD = 25 V 10 V 0 20 40 60 80
4
10
0
0 100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100 IAP = 25 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω
80
60
40
20 0 25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1824-0210 Rev.2.10 May 12, 2010
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RJK0391DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impe.