R2J20652ANP

www.DataSheet4U.com Preliminary R2J20652ANP Integrated Driver – MOS FET (DrMOS) REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Description The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features               Based on Intel 6  6 DrMOS specification pin out Built-in power MOS FET suitable for Notebook, Desktop, Server application Low-side MOS FET with built-in SBD for lower loss and reduced ringing Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers VIN operating-voltage range: 27 V max High-frequency operation (above 1 MHz) possible Large average output current (Max. 35 A) Achieve low power dissipation Controllable driver: Remote on/off Low-side MOS FET disabled function for DCM operation Built-in bootstrapping switch Small package: QFN40 (6 mm  6 mm  0.95 mm) Terminal Pb-free/Halogen-free Outline Integrated Driver-MOS FET (DrMOS) QFN40 package 6 mm × 6 mm VCIN BOOT GH VIN 40 Reg5V Driver Pad High-side MOS Pad 1 10 11 DISBL# MOS FET Driver LSDBL# Low-side MOS Pad PWM 31 CGND GL PGND 30 (Bottom view) 21 20 VSWH REJ03G1867-0300 Rev.3.00 Feb 26, ...