SSM3J114TU

SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 0.3-+00..015 1.5 V drive Low on-resistance Ron = 526 mΩ (max) (@ VGS = -1.5 V) Ron = 321 mΩ (max) (@ VGS = -1.8 V) Ron = 199 mΩ (max) (@ VGS = -2.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 1 2 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.05 Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -1.8 A -3.6 1. Gate 2. Source 3. Drain Drain power dissipation Channel temperature Storage temperature PD (Note 1) 800 mW PD (Note 2) 500 UFM Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2U1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.6 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board (2...