Super Fast Recovery Diodes
RFUS20NS4S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD.
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Description
RFUS20NS4S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD.
Page 1 of 1
www.DataSheet4U.com
Super Fast Recovery Diodes
RFUS20NS4S [ Product description ] ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss. Outline
Features
EPower mold type. EUltra-low Reverse recovery energy.
Product specifications
Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Forward current IF Average rectified forward current IO(A) Forward current surge peak IFSM(A) Junction temperature Tj(ºC) Storage temperature Tstg(ºC) Standard value 430 430 20 100 60Hz/1cyc 150 -55 to +150 Conditions
10.1x9.0(t=4.5) Dimensions
Equivalent circuit diagram
*The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use.
Copyright © 1997-2010 ROHM CO.,LTD.
http://www.rohm.com/products/discrete/diode/fast_recovery/rfus20ns4s/print.html
6/17/2010
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