RF601B2D

www.DataSheet4U.com Fast recovery diodes RF601B2D zApplications General rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 6.0 3)Very fast recovery 4)Low switching loss zConstruction Silicon epitaxial planer zStructure CPD 2.3 2.3 zStructure (2) (1) (3) z Taping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 40 IFSM Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Business frequencies, Rating of R-load, Tc=128°C, 1/2 Io per diode zElectrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time Thermal impedance Unit V V A A °C °C Min. - Typ. 0.87 0.01 14 - Max. 0.93 10 25 6 Unit V µA ns °C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE trr θjc www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.F 3.0 2.0 zFeatures 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 1.6 6.0 RB601B2D zElectrical characteristic curves 　 www.DataSheet4U.com Data Sheet 10 10000 Ta=150 ° C Ta=150 ° C 100 Ta=125 ° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD CURRENT : I F(A) 1 Ta=125 ° C Ta=75° C REVERSE CURRENT:IR(nA) 1000 Ta=75° C 100 0.1 Ta=25° C Ta=-25° C 10 z 10 Ta=25 C 0.01 1 Ta=-25° C 0.001 0 100 200 300 400 500 600 700 800 900 1000...