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Fast Recovery Diode
RF501B2S
zApplications General rectification zDimensions(Unit : mm )
zLand size figure(Unit : mm) 6.0
zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer
1.6
1.6
CPD
2.3 2.3
zStructure
(2)
(1) (3)
zTaping specifications(Unit : mm)
Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55~+150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1 Junction temperature Storage temperature
zAbsolute maximum ratings (Ta=25°C) Parameter
Unit V V A A ℃ ℃
zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time
Symbol VF IR trr
Min. -
Typ. 0.86 0.015 15
Max. 0.92 1 30
Unit V µA ns
Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R
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1/3
2009.11 - Rev.G
3.0 2.0
6.0
RF501B2S
zElectrical characteristic curves
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Data Sheet
10 Ta=150 ° C FORWARD CURRENT : :I F(A)
10000
Ta=150 ° C
Ta=125 ° C
1000 f=1MHz
REVERSE CURRENT : IR(nA)
1000 Ta=75° C 100 Ta=25° C 10 Ta=-25° C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 100
1 Ta=125 ° C 0.1 Ta=25° C
Ta=75° C
0.01
Ta=-25° C
10
0.001
0 100 200 300 400 500 600 700 800 900 100 0
0.1 0 50 100 150 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS
1 0 10 20 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
890 Ta=25° C IF=5A n=30pcs\
100 90 REVERSE CURRENT : IR(nA) 80 70 60 50 40 30 20 10 AVE : 10.7nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25° C VR=200V n=30pcs
200 Ta=25° C f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE : V F(mV)
880
190
870
180
860
170 AVE : 74.9pF 160
850
AVE:856.6mV
840
0 VF DISPERSION MAP IR DISPERSION MAP
150 Ct DISPERSION MAP
300 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 1cyc RESERVE RECOVERY TIME : trr(ns)
30 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm 8.3ms 8.3ms 100 1cyc
250
25
200
8.3m
20
150 AVE : 88.0A 100
15
10
AVE : 14.5ns
10
50
5
0 IFSM DISPERSION MAP
0 trr DISPERSION MAP
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.11 - Rev.H
RF501B2S
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Data Sheet
1000
100 Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE : Rth (° C/W) Rth(j-a)
10
PEAK SURGE FORWARD CURRENT : I FSM(A)
Ifsm t
8 10 Rth(j-c)
IM=100mA
DC D=1/2
FORWARD POWER DISSIPATION : Pf(W)
6 Sin(θ=180) 4
100
1
IF=1A
1ms
tim
2
300us 0.1 0.001 0 0.1 10 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS
10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100
AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS Io t VR T D=t/T VR=100V Tj=150° C ELECTROSTATIC DISCHARGE TEST ES.