DatasheetsPDF.com

RF501B2S Dataheets PDF



Part Number RF501B2S
Manufacturers Rohm
Logo Rohm
Description Fast Recovery Diode
Datasheet RF501B2S DatasheetRF501B2S Datasheet (PDF)

www.DataSheet4U.com Fast Recovery Diode RF501B2S zApplications General rectification zDimensions(Unit : mm ) zLand size figure(Unit : mm) 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55~+150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=.

  RF501B2S   RF501B2S



Document
www.DataSheet4U.com Fast Recovery Diode RF501B2S zApplications General rectification zDimensions(Unit : mm ) zLand size figure(Unit : mm) 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55~+150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1 Junction temperature Storage temperature zAbsolute maximum ratings (Ta=25°C) Parameter Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.86 0.015 15 Max. 0.92 1 30 Unit V µA ns Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.G 3.0 2.0 6.0 RF501B2S zElectrical characteristic curves www.DataSheet4U.com Data Sheet 10 Ta=150 ° C FORWARD CURRENT : :I F(A) 10000 Ta=150 ° C Ta=125 ° C 1000 f=1MHz REVERSE CURRENT : IR(nA) 1000 Ta=75° C 100 Ta=25° C 10 Ta=-25° C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 100 1 Ta=125 ° C 0.1 Ta=25° C Ta=75° C 0.01 Ta=-25° C 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 0.1 0 50 100 150 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 1 0 10 20 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 890 Ta=25° C IF=5A n=30pcs\ 100 90 REVERSE CURRENT : IR(nA) 80 70 60 50 40 30 20 10 AVE : 10.7nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25° C VR=200V n=30pcs 200 Ta=25° C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) 880 190 870 180 860 170 AVE : 74.9pF 160 850 AVE:856.6mV 840 0 VF DISPERSION MAP IR DISPERSION MAP 150 Ct DISPERSION MAP 300 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 1cyc RESERVE RECOVERY TIME : trr(ns) 30 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms 100 1cyc 250 25 200 8.3m 20 150 AVE : 88.0A 100 15 10 AVE : 14.5ns 10 50 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.H RF501B2S www.DataSheet4U.com Data Sheet 1000 100 Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE : Rth (° C/W) Rth(j-a) 10 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm t 8 10 Rth(j-c) IM=100mA DC D=1/2 FORWARD POWER DISSIPATION : Pf(W) 6 Sin(θ=180) 4 100 1 IF=1A 1ms tim 2 300us 0.1 0.001 0 0.1 10 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS Io t VR T D=t/T VR=100V Tj=150° C ELECTROSTATIC DISCHARGE TEST ES.


RF305B6S RF501B2S RF505B6S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)