Fast Recovery Diodes
www.DataSheet4U.com
Fast recovery diodes
RF1601T2D
Applications General rectification Dimensions (Unit : mm)
4.5±0.3 ...
Description
www.DataSheet4U.com
Fast recovery diodes
RF1601T2D
Applications General rectification Dimensions (Unit : mm)
4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1
Structure
1.2 1.3 0.8
5.0±0.2
Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
(1) (2) (3)
8.0±0.2 12.0±0.2 15.0±0.4 0.2 13.5MIN 8.0
①
Construction Silicon epitaxial planar
(1) (2) (3)
0.7±0.1 0.05
2.6±0.5
ROHM : TO220FN ① Manufacture Date
Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 16 Io Forward current surge peak (60Hz/1cyc) 80 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode
Unit V V A A C C
Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time
Symbol VF IR trr
Min. -
Typ. -
Max. 0.93 10 30
Unit V μA ns
Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.D
RF1601T2D
Electrical characteristics curves
www.DataSheet4U.com
Data Sheet
10 Ta=150 C
10000
Ta=150 C Ta=125 C
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1 Ta=125 C 0.1 Ta=75 C Ta=-25 C 0.01 Ta=25 C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1
100
10
0.001 0 100 200 300 400 500 6...
Similar Datasheet