RB521CS-30

www.DataSheet4U.com Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) zFeatures 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V µA IF=10mA VR=10V Conditions www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.B RB521CS-30 zElectrical characteristic curves 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS Ta=125° C REVERSE CURRENT:IR(uA) Ta=75° C Ta=−25° C Ta=25° C 10000 　 www.DataSheet4U.com Data Sheet 100 Ta=125° C Ta=75° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHｚ FORWARD CURRENT:IF(mA) 1000 100 10 1 0.1 0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS Ta=25° C 10 Ta=-25° C 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 300 30 Ta=25° C IF=10mA n=30pcs 25 20 15 10 AVE:2.017uA 5 0 Ta=25° C VR=10V n=30pcs 20 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 AVE:17.34pF Ta=25℃ f=1M...