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RB496KA
Diodes
Schottky barrier diode
RB496KA
zApplications Low current rectification zDimensions (Unit : mm)
2.0±0.1 1.3±0.1 0.65 0.65 0.85MAX 0.77±0.05 0.2MAX 0~0.1
zFeatures 1) Small mold type (TUMD5) 2) Low VF 3) High reliability
2.1±0.1
1.7±0.1
0.3 -0.05
+0.1
0.17±0.05 1pin mark
ROHM : TUMD5 JEDEC : JEITA : dot (year week factory) + day
zStructure Silicon epitaxial planer
zLand size figure (Unit : mm)
1.3 0.65 0.65 0.4 0.6MIN 1.9
zStructure
0.45
zTaping dimensions (Unit : mm)
1.75±0.01 0.3±0.1
φ1.55±0.05
2.0±0.05
4.0±0.1
3.5±0.1 φ1.1±0.1 4.0±0.1 2.2±0.1 2.4±0.1
0~0.5
5.5±0.2
8.0±0.2
0.98±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (DC) Average rectified forward current(*1)
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature Storage temperature (*1) Rating of per diode
zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF 1 VF 2 IR
Symbol VR Io IFSM Tj Tstg
Limits 20 1 5 125 -40 to +125
Unit V A A ℃ ℃
Min. -
Typ.
Max. 0.40 0.43 800
Unit V V µA
Conditions IF=0.7A IF=1A VR=10V
-
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RB496KA
Diodes
zElectrical characteristic curves
1000 FORWARD CURRENT:IF(mA) 100000 REVERSE CURRENT:IR(uA) 10000 1000 Ta=25℃ 100 10 1 0.1 0 100 200 300 400 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 500 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 20 Ta=-25℃ Ta=125℃ Ta=75℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃
100
Ta=75℃ 100
Ta=25℃ Ta=-25℃
10
10
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
370
FORWARD VOLTAGE:VF(mV)
410
1000 Ta=25℃ VF=1A n=30pcs 900 800 REVERSE CURRENT:IR(uA) 700 600 500 400 300 200 100 0 AVE:76.67uA Ta=25℃ VR=10V n=30pcs
360 350
Ta=25℃ VF=0.7A n=30pcs
400
390
340
AVE:349.5mV
380
AVE:382.9mV
330 320
VF DISPERSION MAP
370
360
IR DISPERSION MAP
200 PEAK SURGE FORWARD CURRENT:IFSM(A) 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 100 AVE:154.7pF Ta=25℃ f=1MHz VR=0V n=10pcs
30 25 20 15 AVE:14.7A 10 5 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 8.3ms 1cyc
20
Ifsm 8.3ms 8.3ms
15
1cyc
10
5
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
Ct DISPERSION MAP
30 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 25 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
Ifsm t
10000
Mounted on epoxy board IM=10mA IF=50mA
1 0.9 0.8 D=1/2 Sin(θ=180) DC FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1
PEAK SURGE FORWARD CURRENT:IFSM(A)
1000
1ms
time
Rth(j-a)
300us
100 Rth(j-c) 10
1 0.001
0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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RB496KA
Diodes
0.5 0.4 REVERSE POWER DISSIPATION:PR (W) 0.3 0.2 0.1 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(θ=180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC
3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 T 1.5 1 0.5 0 0 25 Sin(θ=180) 50 75 100 125 D=1/2 DC 0A 0V t Io VR D=t/T VR=10V Tj=125℃
3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) DERATING CURVE(Io-Tc) Sin(θ=180) DC D=1/2 0A 0V t T Io VR D=t/T VR=10V Tj=125℃
D=1/2
AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE(Io-Ta)
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or device.