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RB496KA Dataheets PDF



Part Number RB496KA
Manufacturers Rohm
Logo Rohm
Description Schottky barrier diode
Datasheet RB496KA DatasheetRB496KA Datasheet (PDF)

www.DataSheet4U.com RB496KA Diodes Schottky barrier diode RB496KA zApplications Low current rectification zDimensions (Unit : mm) 2.0±0.1 1.3±0.1 0.65 0.65 0.85MAX 0.77±0.05 0.2MAX 0~0.1 zFeatures 1) Small mold type (TUMD5) 2) Low VF 3) High reliability 2.1±0.1 1.7±0.1 0.3  -0.05 +0.1 0.17±0.05 1pin mark ROHM : TUMD5 JEDEC : JEITA : dot (year week factory) + day zStructure Silicon epitaxial planer zLand size figure (Unit : mm) 1.3 0.65 0.65 0.4 0.6MIN 1.9 zStructure 0.45 zTaping di.

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www.DataSheet4U.com RB496KA Diodes Schottky barrier diode RB496KA zApplications Low current rectification zDimensions (Unit : mm) 2.0±0.1 1.3±0.1 0.65 0.65 0.85MAX 0.77±0.05 0.2MAX 0~0.1 zFeatures 1) Small mold type (TUMD5) 2) Low VF 3) High reliability 2.1±0.1 1.7±0.1 0.3  -0.05 +0.1 0.17±0.05 1pin mark ROHM : TUMD5 JEDEC : JEITA : dot (year week factory) + day zStructure Silicon epitaxial planer zLand size figure (Unit : mm) 1.3 0.65 0.65 0.4 0.6MIN 1.9 zStructure 0.45 zTaping dimensions (Unit : mm) 1.75±0.01 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 3.5±0.1 φ1.1±0.1 4.0±0.1 2.2±0.1 2.4±0.1 0~0.5 5.5±0.2 8.0±0.2 0.98±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature (*1) Rating of per diode zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF 1 VF 2 IR Symbol VR Io IFSM Tj Tstg Limits 20 1 5 125 -40 to +125 Unit V A A ℃ ℃ Min. - Typ. Max. 0.40 0.43 800 Unit V V µA Conditions IF=0.7A IF=1A VR=10V - 1/3 www.DataSheet4U.com RB496KA Diodes zElectrical characteristic curves 1000 FORWARD CURRENT:IF(mA) 100000 REVERSE CURRENT:IR(uA) 10000 1000 Ta=25℃ 100 10 1 0.1 0 100 200 300 400 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 500 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 20 Ta=-25℃ Ta=125℃ Ta=75℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 Ta=75℃ 100 Ta=25℃ Ta=-25℃ 10 10 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 370 FORWARD VOLTAGE:VF(mV) 410 1000 Ta=25℃ VF=1A n=30pcs 900 800 REVERSE CURRENT:IR(uA) 700 600 500 400 300 200 100 0 AVE:76.67uA Ta=25℃ VR=10V n=30pcs 360 350 Ta=25℃ VF=0.7A n=30pcs 400 390 340 AVE:349.5mV 380 AVE:382.9mV 330 320 VF DISPERSION MAP 370 360 IR DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 100 AVE:154.7pF Ta=25℃ f=1MHz VR=0V n=10pcs 30 25 20 15 AVE:14.7A 10 5 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 1cyc 20 Ifsm 8.3ms 8.3ms 15 1cyc 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ct DISPERSION MAP 30 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 25 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 10000 Mounted on epoxy board IM=10mA IF=50mA 1 0.9 0.8 D=1/2 Sin(θ=180) DC FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 1ms time Rth(j-a) 300us 100 Rth(j-c) 10 1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2/3 www.DataSheet4U.com RB496KA Diodes 0.5 0.4 REVERSE POWER DISSIPATION:PR (W) 0.3 0.2 0.1 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(θ=180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 T 1.5 1 0.5 0 0 25 Sin(θ=180) 50 75 100 125 D=1/2 DC 0A 0V t Io VR D=t/T VR=10V Tj=125℃ 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) DERATING CURVE(Io-Tc) Sin(θ=180) DC D=1/2 0A 0V t T Io VR D=t/T VR=10V Tj=125℃ D=1/2 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE(Io-Ta) 3/3 www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or device.


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