RB205T-40

www.DataSheet4U.com Schottky barrier diode RB205T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 4 Construction Silicon epitaxial planer 205 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 15 100 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 300 2 Unit V A C/W Conditions IF=7.5A VR=40V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RB205T-40 Electrical characteristic curves 10 Ta=150 ℃ 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125 ℃ 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 10000 1000 100 10 1 0.1 0 100 200 300 400 500 600 700 0 5 10 1000000 　 www.DataSheet4U.com Data Sheet Ta=150 ℃ Ta=125 ℃ 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 0.01 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 1 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLT...