HEXFET Power MOSFET
PD - 97490 www.DataSheet4U.com
IRFH5210PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
100 14.9 39 1.8 55
V mΩ...
Description
PD - 97490 www.DataSheet4U.com
IRFH5210PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
100 14.9 39 1.8 55
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Features and Benefits
Features Low RDSon (≤ 14.9mΩ at Vgs = 10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IRFH5210TRPBF IRFH5210TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel
Note
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ±20 10 8.1 55 35 220 3.6 104 0.029 -55 to + 1...
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