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TK6A65D Dataheets PDF



Part Number TK6A65D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TK6A65D DatasheetTK6A65D Datasheet (PDF)

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (N.

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TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 6 24 45 281 6 4.5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Internal Connection Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 13.8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 Start of commercial production 2012-01 1 2013-11-01 Electrical Characteristics (Ta = 25°C) TK6A65D Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ 650 2.0 ⎯ 1.0 ⎯ ⎯ ⎯ tr 10 V ID = 3 A VOUT ⎯ VGS 0V ton 50 Ω RL = 67 Ω ⎯ tf VDD ≈ 200 V toff Duty ≤ 1%, tw = 10 μs ⎯ ⎯ Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 6 A ⎯ ⎯ Qgd ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.95 4.0 1050 5 100 Max ±1 10 ⎯ 4.0 1.11 ⎯ ⎯ ⎯ ⎯ 25 ⎯ 60 ⎯ 10 ⎯ 75 ⎯ 20 ⎯ 13 ⎯ 7⎯ Unit μA μA V V Ω S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs Min Typ. Max Unit ⎯⎯ 6 A ⎯ ⎯ 24 A ⎯ ⎯ −1.7 V ⎯ 1300 ⎯ ns ⎯ 10 ⎯ μC Marking K6A65D Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 2013-11-01 DRAIN CURRENT ID (A) 5 COMMON SOURCE Tc = 25°C PULSE TEST 4 ID – VDS 10 6.25 8 6 3 5.75 2 5.5 1 VGS = 5 V 0 02468 DRAIN-SOURCE VOLTAGE VDS 10 (V) ID – VGS 10 COMMON SOURCE VDS = 20 V PULSE TEST 8 6 4 25 2 100 Tc = −55°C 0 0 246 8 GATE-SOURCE VOLTAGE VGS 10 (V) DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) TK6A65D ID – VDS 10 10 8 7 COMMON SOURCE Tc = 25°C PULSE TEST 8 6.75 6 6.5 6.25 4 6 2 5.5 VGS = 5 V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) VDS – VGS 10 COMMON SOURCE Tc = 25°C PULSE TEST 8 6 6 4 3 2 ID = 1.5 A 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) ⎪Yfs⎪ – ID 100 COMMON SOURCE VDS = 10 V PULSE TEST 10 Tc = −55°C 25 100 1 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) RDS (O.


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