Document
TK6A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK6A65D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
650 ±30
6 24 45
281
6 4.5 150 −55 to 150
Unit V V
A
W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol
Rth (ch-c) Rth (ch-a)
Max
2.78 62.5
Unit
°C/W °C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 13.8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2012-01 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
TK6A65D
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min
IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ 650 2.0 ⎯ 1.0 ⎯ ⎯
⎯
tr
10 V
ID = 3 A VOUT
⎯
VGS
0V
ton
50 Ω
RL = 67 Ω ⎯
tf
VDD ≈ 200 V toff Duty ≤ 1%, tw = 10 μs
⎯
⎯
Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 6 A
⎯ ⎯
Qgd ⎯
Typ.
⎯ ⎯ ⎯ ⎯ 0.95 4.0 1050 5 100
Max
±1 10 ⎯ 4.0 1.11 ⎯ ⎯ ⎯
⎯
25 ⎯
60 ⎯
10 ⎯
75 ⎯
20 ⎯ 13 ⎯ 7⎯
Unit μA μA V V Ω S pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
⎯
⎯ IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 6 A
⎯ ⎯ 24 A
⎯ ⎯ −1.7 V
⎯ 1300 ⎯
ns
⎯ 10 ⎯ μC
Marking
K6A65D
Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
2 2013-11-01
DRAIN CURRENT ID (A)
5 COMMON SOURCE Tc = 25°C PULSE TEST
4
ID – VDS
10
6.25 8
6
3 5.75
2 5.5
1 VGS = 5 V
0 02468
DRAIN-SOURCE VOLTAGE VDS
10
(V)
ID – VGS
10 COMMON SOURCE
VDS = 20 V PULSE TEST 8
6
4 25
2 100 Tc = −55°C
0 0 246 8
GATE-SOURCE VOLTAGE VGS
10
(V)
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
TK6A65D
ID – VDS
10 10 8
7 COMMON SOURCE Tc = 25°C
PULSE TEST 8
6.75
6 6.5
6.25 4
6
2 5.5 VGS = 5 V
0 0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
10 COMMON SOURCE Tc = 25°C PULSE TEST
8
6 6
4 3
2 ID = 1.5 A
0 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
⎪Yfs⎪ – ID
100 COMMON SOURCE VDS = 10 V PULSE TEST
10 Tc = −55°C
25 100
1
0.1 0.1
1
10 100
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω)
RDS (O.