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TK50P03M1

Toshiba Semiconductor
Part Number TK50P03M1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (...
Published Jul 21, 2010
Datasheet PDF File TK50P03M1 PDF File


TK50P03M1
TK50P03M1


Features
(1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ...



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