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TK15J60U Dataheets PDF



Part Number TK15J60U
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TK15J60U DatasheetTK15J60U Datasheet (PDF)

TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15J60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) .

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TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15J60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 15 30 170 81 11 17 150 −55 to 150 Unit V V A W mJ A mJ °C °C 15.9 MAX. Unit: mm Ф3.2 ± 0.2 2.0 1.0 9.0 4.5 20.0 ± 0.3 3.3 MAX. 2.0 20.5 ± 0.5 2.0 ± 0.3 1.0 +0.3 -0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. 1.8 MAX. +0.3 0.6 -0.1 2.8 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC JEITA ⎯ SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.735 50 Unit °C/W °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.17 mH, RG = 25 Ω, IAR = 11 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 Start of commercial production 2008-06 1 2013-11-01 Electrical Characteristics (Ta = 25°C) TK15J60U Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min Typ. Max Unit IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ ±1 ⎯ ⎯ 100 600 ⎯ ⎯ 3.0 ⎯ 5.0 ⎯ 0.24 0.3 2.1 8.5 ― ― 950 ― ― 47 ― ― 2300 ― μA μA V V Ω S pF tr 10 V ID = 7.5 A VOUT ⎯ 37 ⎯ VGS 0V ton 50 Ω RL = 40 Ω ⎯ 80 ⎯ ns tf ⎯ 8 ⎯ VDD ≈ 300 V toff Duty ≤ 1%, tw = 10 μs ⎯ 105 ⎯ Qg ⎯ 17 ⎯ Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A ⎯ 10 ⎯ nC Qgd ⎯ 7 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs Min Typ. Max Unit ⎯ ⎯ 15 A ⎯ ⎯ 30 A ⎯ ⎯ −1.7 V ⎯ 530 ⎯ ns ⎯ 9.0 ⎯ μC Marking TOSHIBA K15J60U Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 Drain current ID (A) 10 Common source Tc = 25°C 8 Pulse test 10 15 ID – VDS 8 6 4 2 7 6.8 6.5 6.2 6 VGS = 5.8 V 0 01 23 4 5 Drain−source voltage VDS (V) Drain current ID (A) TK15J60U 30 10 24 15 18 ID – VDS 8.5 Common source Tc = 25°C Pulse test 8 7.5 12 7 6.3 6 VGS = 6.2 V 0 0 10 20 30 40 50 Drain−source voltage VDS (V) Drain current ID (A) 30 Common source VDS = 20 V 24 Pulse test ID – VGS 18 100 12 25 Tc = −55°C 6 0 0 2 4 6 8 10 Gate−source voltage VGS (V) Drain−source voltage VDS (V) VDS – VGS 10 Common source Tc = 25°C Pulse test 8 6 4 ID = 15A 2 7.5 4 0 0 4 8 12 16 20 Gate−source voltage VGS (V) Forward transfer admit.


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