Document
TK15J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK15J60U
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
600 ±30 15 30 170
81
11 17 150 −55 to 150
Unit V V
A
W mJ A mJ °C °C
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
2.0 1.0 9.0 4.5
20.0 ± 0.3
3.3 MAX. 2.0
20.5 ± 0.5
2.0 ± 0.3
1.0
+0.3 -0.25
5.45 ± 0.2
5.45 ± 0.2
4.8 MAX.
1.8 MAX. +0.3
0.6 -0.1
2.8
123
1. Gate 2. Drain(heat sink) 3. Source
JEDEC JEITA
⎯ SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol
Rth (ch-c) Rth (ch-a)
Max
0.735 50
Unit
°C/W °C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.17 mH, RG = 25 Ω, IAR = 11 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
1
3
Start of commercial production
2008-06 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
TK15J60U
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±1
⎯ ⎯ 100
600 ⎯
⎯
3.0 ⎯ 5.0
⎯ 0.24 0.3
2.1 8.5
―
― 950 ―
― 47 ―
― 2300 ―
μA μA V V Ω S
pF
tr
10 V
ID = 7.5 A VOUT
⎯ 37 ⎯
VGS
0V
ton
50 Ω
RL = 40 Ω ⎯ 80 ⎯
ns
tf ⎯ 8 ⎯
VDD ≈ 300 V
toff Duty ≤ 1%, tw = 10 μs
⎯ 105 ⎯
Qg ⎯ 17 ⎯
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A
⎯ 10 ⎯ nC
Qgd ⎯ 7 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
⎯
⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 15 A
⎯ ⎯ 30 A
⎯ ⎯ −1.7 V
⎯ 530 ⎯
ns
⎯ 9.0 ⎯ μC
Marking
TOSHIBA
K15J60U
Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2013-11-01
Drain current ID (A)
10 Common source
Tc = 25°C 8 Pulse test
10 15
ID – VDS
8
6
4
2
7 6.8
6.5
6.2 6 VGS = 5.8 V
0 01 23 4 5
Drain−source voltage VDS (V)
Drain current ID (A)
TK15J60U
30 10
24 15
18
ID – VDS
8.5 Common source Tc = 25°C Pulse test 8
7.5
12 7
6.3 6
VGS = 6.2 V
0 0 10 20 30 40 50
Drain−source voltage VDS (V)
Drain current ID (A)
30 Common source
VDS = 20 V 24 Pulse test
ID – VGS
18 100
12 25 Tc = −55°C
6
0 0 2 4 6 8 10
Gate−source voltage VGS (V)
Drain−source voltage VDS (V)
VDS – VGS
10 Common source Tc = 25°C Pulse test
8
6
4 ID = 15A
2 7.5 4
0 0 4 8 12 16 20
Gate−source voltage VGS (V)
Forward transfer admit.