TK130F06K3

TK130F06K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications 10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3 Low drain-source ON resistance: RDS (ON) = 2.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 220 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.1 Unit: mm 0.4 ± 0.1 10.0 ± 0.3 1.6 Absolute Maximum Ratings (Ta = 25°C) 0.76 ± 0.1 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 130 390 300 176 130 30 175 −55 to 175 Unit V V V A W 1.4 ± 0.1 2.54 ± 0.25 1 0.1 ± 0.1 2 3 2.35 ± 0.1 2.34 ± 0.25 3.5 ± 0.2 0.4 ± 0.1 2.76 1. 2. 8.0 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range (Note 4) (Note 4) GATE DRAIN （HEAT SINK） 3. SOURSE mJ 6.8 JEDEC A mJ °C °C ⎯ ⎯ 2-10W1A JEITA TOSHIBA Weight: 1.07 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.5 Unit 1 °C/W 2 Note 1: Please use devices on condition that the channel temperature is below 175°C. Note 2: VDD = 25 V, Tch = 25°C, L = 14 μH, RG = 25 Ω, IAR = 130 A Note 3: Repetitive ra...