SSM6P09FU

SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 2.7 Ω (max) (@VGS = −10 V) : Ron = 4.2 Ω (max) (@VGS = −4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −200 mA IDP −800 Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW Channel temperature Storage temperature range Tch 150 °C JEDEC ― Tstg −55~150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Figure 1. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is ...