SSM6L35FE

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE ○ High-Speed Switching Applications ○ Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 0.55±0.05 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.12±0.05 0.2±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Q2 Absolute Maximum Ratings (Ta = 25°C) ES6 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 JEDEC - JEITA - TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) Characteristics Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse VDSS VGSS ID IDP -20 V ±10 V -100 mA -200 Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) Characteristic Symbol Rating Unit Drain power dissipation PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temper...