SSM6L09FU

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 0.7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 Ω (max) (@VGS = −10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 30 V ±20 V 400 mA 800 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit −30 V ±20 V −200 mA −400 JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation Channel temperature Storage temperature range PD (Note 1) 300 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re...