SSM6L09FU
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI)
SSM6L09FU
Power Management Switch Hig...
SSM6L09FU
TOSHIBA Field Effect
Transistor Silicon N/P Channel MOS Type(π-MOSVI)
SSM6L09FU
Power Management Switch High Speed Switching Applications
Unit: mm
Small package Low on-resistance
Q1: RDS(ON) = 0.7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 Ω (max) (@VGS = −10 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
30
V
±20
V
400 mA
800
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
−30
V
±20
V
−200 mA
−400
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation Channel temperature Storage temperature range
PD (Note 1)
300
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re...