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SSM6K22FE Dataheets PDF



Part Number SSM6K22FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM6K22FE DatasheetSSM6K22FE Datasheet (PDF)

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K22FE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ±12 V Drain current DC ID Pulse IDP 1.4 A 5.

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SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K22FE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ±12 V Drain current DC ID Pulse IDP 1.4 A 5.6 1,2,5,6 : Drain 3 : Gate 4 : Source Power dissipation Channel temperature Storage temperature range PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA 2-2N1A Note: Using continuously under heavy loads (e.g. the application of Weight: 3 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Marking 654 Equivalent Circuit (Top View) 654 KD 123 123 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2004-01 1 2014-03-01 SSM6K22FE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Note2: Pulse test Symbol Test Condition IGSS V (BR) DSS V (BR) DSX IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff VGS = ±12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS =20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.7A (Note 2) ID = 0.7 A, VGS = 4 V (Note 2) ID = 0.7 A, VGS = 2.5 V (Note 2) VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.7 A VGS = 0 to 2.5 V, RG = 4.7 Ω Min Typ. Max Unit − − ±1 μA 20 − − V 12 − − − − 1 μA 0.4 − 1.1 V 1.4 2.8 − S − 150 170 mΩ − 190 230 − 125 − pF − 17 − pF − 42 − pF − 15.5 − ns − 8.5 − Switching Time Test Circuit (a) Test Circuit 2.5 V IN 0 10 μs RG OUT VDD VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common .


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