Document
SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE
High Current Switching Applications DC-DC Converter
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on resistance:
RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
±12
V
Drain current
DC
ID
Pulse
IDP
1.4 A
5.6
1,2,5,6 : Drain
3
: Gate
4
: Source
Power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking
654
Equivalent Circuit (Top View)
654
KD
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2004-01
1
2014-03-01
SSM6K22FE
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current
Drain-source breakdown voltage
Drain cut-off current Gate threshold voltage Forward transfer admittance
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time Turn-off time
Note2: Pulse test
Symbol
Test Condition
IGSS V (BR) DSS V (BR) DSX
IDSS Vth ⏐Yfs⏐
RDS (ON)
Ciss Crss Coss ton toff
VGS = ±12 V, VDS = 0
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = -12 V
VDS =20 V, VGS = 0
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 0.7A
(Note 2)
ID = 0.7 A, VGS = 4 V
(Note 2)
ID = 0.7 A, VGS = 2.5 V (Note 2)
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, ID = 0.7 A
VGS = 0 to 2.5 V, RG = 4.7 Ω
Min Typ. Max Unit
−
−
±1
μA
20
−
−
V
12
−
−
−
−
1
μA
0.4
−
1.1
V
1.4 2.8
−
S
−
150 170
mΩ
−
190 230
−
125
−
pF
−
17
−
pF
−
42
−
pF
−
15.5
−
ns
−
8.5
−
Switching Time Test Circuit
(a) Test Circuit
2.5 V IN
0
10 μs
RG
OUT
VDD
VDD = 10 V RG = 4.7 Ω Duty ≤ 1%
VIN: tr, tf < 5 ns Common .