SSM5G04TU

SSM5G04TU www.DataSheet4U.com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating −12 ±12 −1.0 −2.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 0.5 2 (50 Hz) 125 Unit V V A A °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~85 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautio...