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SSM3K318T
Silicon N-Channel MOSFET
Description
SSM3K318T TOSHIBA Field-Effect
Transistor
Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 0～0.1 0.15 0.16±0.05 2.9±0.2 1.9±0.2 0.95 ...
Toshiba Semiconductor
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