SSM3K316T

SSM3K316T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 10s Tch Tstg Rating 30 ± 12 4.0 8.0 700 1250 150 −55 to 150 Unit V V A mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ― absolute maximum ratings. TOSHIBA 2-3S1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 10 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The Junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristi...