TPCF8104

www.DataSheet4U.com TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 ±20 −6 −24 2.5 0.7 5.8 −3 0.25 150 −55~150 Unit V V V A W W mJ A mJ °C °C 1 2 3 4 JEDEC JEITA TOSHIBA ― ― 2-3U1A Weight: 0.011 g (typ.) Drain power dissipation Drain power dissipation Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate r...