TPC8212-H

TPC8212-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| =14 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating 30 30 ±20 6 24 1.5 W 1.1 0.75 W 0.45 46.8 6 0.10 150 −55～150 mJ A mJ ℃ ℃ Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Weight: 0.085 g (typ.) Circuit Configuration Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (...