TPC8210

TPC8210 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) z High forward transfer admittance: |Yfs| = 13 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 8 32 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) PD (1) 0.75 W Circuit Configuration 8 7 6 5 PD (2) EAS IAR EAR Tch Tstg 0.45 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 83.2 8 0.1 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/vol...