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TPC6005

Toshiba Semiconductor
Part Number TPC6005
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description TPC6005 com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC A...
Datasheet PDF File TPC6005 PDF File

TPC6005
TPC6005

Overview
TPC6005 com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancementmode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±12 6 24 2.
2 0.
7 5.
8 3 ...


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