TPC6003

TPC6003 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating 30 30 ±20 6 A 24 Unit V V V Drain current Drain power dissipation Drain power dissipation JEDEC 2.2 0.7 5.8 3 0.22 150 −55 to 150 W W mJ A mJ °C °C ― ― 2-3T1A JEITA TOSHIBA Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Me...