TPCA8105

TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications Small footprint due to compact and slim package Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.) (VGS = − 4.5V） High forward transfer admittance :|Yfs| = 14 S (typ.) Low leakage current : IDSS = −10 μA (VDS = −12 V) Enhancement mode : Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA ) 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A 6 .0 ± 0 .3 5 .0 ± 0 .2 0.15±0.05 0.95±0.05 1 4 5 .0 ± 0 .2 0.595 A 0.166±0.05 S 0.05 S 1 4 1.1±0.2 0 .6 ± 0 .1 3 .5 ± 0 .2 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) 8 5 0.8±0.1 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit −12 V −12 V ±8 V −6 A −24 20 2.8 W 1.6 25.1 mJ −6 A 0.8 mJ 150 °C −55 to 150 °C 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8765 1234 Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next p...