TPCA8022-H www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
T...
TPCA8022-H www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8022-H
0.5±0.1
Switching
Regulator Applications Motor Drive Applications DC/DC Converter Applications
6.0±0.3
Unit: mm
1.27 8 0.4±0.1 5 0.05 M A
5.0±0.2
Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance
: RDS (ON) = 17 mΩ (typ.) (VGS=10V, ID=11A)
0.15±0.05
1 0.95±0.05
4
0.595 A
High forward transfer admittance: |Yfs| = 46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
0.05 S S 1 0.6±0.1 4 1.1±0.2
4.25±0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 100 100 ±20 22 66 45 2.8
Unit V V V A W W
1,2,3:SOURCE 5,6,7,8:DRAIN
8
5 0.8±0.1
4:GATE
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
Circuit Configuration
1.6 W 8 197 22 3.8 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
EAR Tch Tstg
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the...