TPC8022-H

TPC8022-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge : QSW = 3.5 nC (typ.) z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance: |Yfs| = 15 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 7.5 30 1.9 1.0 26 7.5 0.08 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C 1 2 3 4 JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.085 g (typ.) Drain power dissipation (t = 10 s) Drain power dissipation (t = 10 s) Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause...