TPC6107

TPC6107 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±12 −4.5 −18 2.2 0.7 1.3 −2.25 0.22 150 −55 to 150 Unit V V V A Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) JEDEC W W mJ A mJ °C °C ⎯ ⎯ 2-3T1A JEITA TOSHIBA Weight: 0.011 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor R...