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2SK4017 Dataheets PDF



Part Number 2SK4017
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK4017 Datasheet2SK4017 Datasheet (PDF)

www.DataSheet4U.com 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications 6.5 ± 0.2 5.2 ± 0.2 1.5 ± 0.2 Unit: mm 0.6 MAX. z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 1.6 0.9 4.1 ± 0.2 5.5.

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www.DataSheet4U.com 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications 6.5 ± 0.2 5.2 ± 0.2 1.5 ± 0.2 Unit: mm 0.6 MAX. z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 1.6 0.9 4.1 ± 0.2 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 20 40.5 5 2 150 −55 to 150 Unit 1 2 3 V V V A A W mJ A mJ °C °C 1. 2. 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 2.3 ± 0.2 5.7 2 1 3 Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range GATE DRAIN (HEAT SINK) 3. SOURSE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 www.DataSheet4U.com 2SK4017 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf ≈ Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge toff Qg Qgs Qgd VDD ≈ 48 V, VGS = 10 V, ID = 5 A ≤ — — — — 35 15 11 4 — — — — nC VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10mA, VGS = -20V VDS = 10.



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