2SK4026

www.DataSheet4U.com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Regulator Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． Features Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ０．９ １．６ ５．５±０．２ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ Absolute Maximum Ratings (Ta = 25°C) １ ２ ３ Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 1 2 20 56 1 2 150 −55 to 150 Unit V V V A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． JEDEC JEITA TOSHIBA ― ― 2-7J2B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduct...