2SK4023

www.DataSheet4U.com 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4023 Switching Regulator, DC/DC Converter ６．５±０．２ Unit: mm ５．２±０．２ １．５±０．２ ０．６ MAX． ４．１±０．２ ５．７ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) １．６ ５．５±０．２ ０．９ １．１±０．２ ０．６ MAX Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 1 2 20 122 1 2 150 −55~150 Unit ０．８ MAX． １ ２ ３ ０．６±０．１５ ０．６±０．１５ V V V A W mJ A mJ °C °C １．1 MAX． ２．３±０．２ Absolute Maximum Ratings (Ta = 25°C) ２．３ ２．３ Pulse (t = 1 ms) (Note 1) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the...